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SQ4936EY
www.vishay.com
Vishay Siliconix
Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V DS (V)
R DS(on) ( ? ) at V GS = 10 V
R DS(on) ( ? ) at V GS = 4.5 V
I D (A)
Configuration
SO-8
D 1
30
0.036
0.053
7
Dual
D 2
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? Package with Low Thermal Resistance
? 100 % R g and UIS Tested
? AEC-Q101 Qualified c
? Compliant to RoHS Directive 2002/95/EC
S 1
1
8
D 1
G 1
S 2
G 2
2
3
4
7
6
5
D 1
D 2
D 2
G 1
G 2
S 1
S 2
Top View
N-Channel MOSFET
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SO-8
SQ4936EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
30
± 20
UNIT
V
Continuous Drain Current
T C = 25 °C
T C = 125 °C
I D
7
4
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
I S
I DM
3
28
A
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T C = 25 °C
T C = 125 °C
I AS
E AS
P D
T J , T stg
13
8
3.3
1.1
- 55 to + 175
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB
Mount b
R thJA
R thJF
110
45
°C/W
Notes
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
S11-2113-Rev. B, 07-Nov-11
1
Document Number: 68868
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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